PART |
Description |
Maker |
APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 MOSFET
|
Microsemi Corporation
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IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET(减振钢板基本\u003d- 100V的,的Rds(on)\u003d 0.48ohm,身份证\u003d- 6.6A P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性(P沟道的HEXFET功率马鞍山场效应管) P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF International Rectifier, Corp.
|
2SK2983 D12357EJ1V0DS00 2SK2983-ZJ 2SK2983-S 2SK29 |
Low voltage 4V drive power MOSFET MOS Field Effect Transistor From old datasheet system SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
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NP48N055KLE NP48N055KLE-E1-AY NP48N055KLE-E2-AY NP |
48 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
NEC Corp.
|
NP109N04PUJ NP109N04PUJ-E1B-AY NP109N04PUJ-E2B-AY |
MOS FIELD EFFECT TRANSISTOR 110 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING N-CHANNEL POWER MOS FET
|
Renesas Electronics Corporation
|
SPU03N60S5 |
Cool MOS Power-Transistor(Cool MOS 功率晶体 3.2 A, 600 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
STH10NA50 STH10NA50FI STW10NA50 |
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR N-CHANNEL Power MOS MOSFET
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
NP40N055KHE NP40N055KHE-E1-AY NP40N055KHE-E2-AY NP |
40 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB LEAD FREE, MP-25, TO-220, 3 PIN 40 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZJ, TO-263, 3 PIN MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
|
ITT, Corp. International Business Machines, Corp. NEC
|
APT20M45BVFR |
56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement POWER MOS V 200V 56A 0.045 Ohm
|
MICROSEMI POWER PRODUCTS GROUP ADPOW[Advanced Power Technology]
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APT10078BFLL_06 APT10078BFLL APT10078BFLL06 APT100 |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3 14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package Power MOSFET(Vdss=20V, Rds(on)=0.035ohm) Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm) N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的(不适用沟道的HEXFET功率马鞍山场效应管) N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
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